Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124478
Reference17 articles.
1. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
4. Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN
5. Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates
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