Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions-Reference-Cited by-同舟云学术

Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions

Author:

Igarashi Junta¹^ORCID,Jinnai Butsurin²^ORCID,Desbuis Valentin³^ORCID,Mangin Stéphane³^ORCID,Fukami Shunsuke¹²⁴⁵⁶^ORCID,Ohno Hideo¹²⁴⁵⁶^ORCID

Affiliation:

1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

2. WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

3. Université de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France

4. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

5. Center for Science and Innovation in Spintronics, Tohoku University, Sendai 980-8577, Japan

6. Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan

Funder

Tohoku University-Université de Lorraine

Japan Society for the Promotion of Science

Program on Open Innovation Platform with Enterprises, Research Institute and Academia

Japan Society for the Promotion of Science London

Research Institute of Electrical Communication, Tohoku University

Division for Interdisciplinary Advanced Research and Education, Tohoku University

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference33 articles.

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