Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm-Reference-Cited by-同舟云学术

Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm

Published:2014-08-11 Issue:6 Volume:105 Page:062403
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sato H.¹²,Enobio E. C. I.¹³,Yamanouchi M.¹³,Ikeda S.¹²³,Fukami S.¹²,Kanai S.³,Matsukura F.¹³⁴,Ohno H.¹²³⁴

Affiliation:

1. Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

2. Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aramaki Aza Aoba, Aoba-ku, Sendai 980-0845, Japan

3. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

4. WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4892924

Reference28 articles.

1. Magnetic tunnel junction for nonvolatile CMOS logic

2. Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

3. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

4. Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

5. Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy

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