Modeling Methodology for Thermal Stability Factor in Spin Transfer Torque Magneto-Resistive Random Access Memories
Author:
Affiliation:
1. GLOBALFOUNDRIES, Dresden, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10457976/10415369.pdf?arnumber=10415369
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1. Magnetoresistive Random Access Memory
2. Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots
3. Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
4. Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
5. CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions
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