Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots
Author:
Affiliation:
1. Department of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
2. Samsung Electronics, Semiconductor R&D Center (Grandis), San Jose, California 95134, USA
Funder
Samsung Global MRAM Innovation Programme
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0018909
Reference34 articles.
1. Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
2. CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions
3. Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
4. Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions
5. Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis
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