Synchrotron x-ray scattering study of thin epitaxial Pr2O3 films on Si(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2216421
Reference35 articles.
1. Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
2. Epitaxial Growth of SrTiO3Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method
3. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
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1. Simultaneous X‐Ray Diffraction and Tomography Operando Investigation of Aluminum/Graphite Batteries;Advanced Functional Materials;2020-09-06
2. Structure dependence of epitaxial Pr[sub 2]O[sub 3]∕Si(001) on oxygen pressure during growth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
3. Praseodymium silicide formation at the Pr2O3/Si interface;Applied Surface Science;2008-11
4. Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films;Journal of The Electrochemical Society;2008
5. Vibrational and electrical properties of hexagonal La2O3 films;Applied Physics Letters;2007-09-03
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