Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma-Reference-Cited by-同舟云学术

Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma

Published:2019-04 Issue:4 Volume:9 Page:045019
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Mizutani Fumikazu¹^ORCID,Higashi Shintaro¹,Inoue Mari²,Nabatame Toshihide²

Affiliation:

1. Kojundo Chemical Laboratory Co., Ltd., 5-1-28 Chiyoda, Sakado, Saitama 350-0284, Japan

2. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5081727

Reference36 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

3. Transparent thin-film transistors with zinc indium oxide channel layer

4. Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

5. Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

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