Unveiling growth mechanisms of PEALD In2O3 thin films with amide-based versus alkyl-based novel indium precursors-Reference-Cited by-同舟云学术

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Unveiling growth mechanisms of PEALD In₂O₃ thin films with amide-based versus alkyl-based novel indium precursors

Published:2024 Issue:28 Volume:12 Page:10575-10584
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jeong Gyeong Min¹,Yang Hae Lin¹,Yoon Ara¹,Kim Yoon-Seo¹,Lee Sangick²,Kwone Yonghee²,Jeon Sangyong²,Im Youngjae²,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, Republic of Korea

2. R&D Center, DNF, 142 Daehwa-ro, 132 Beon-gil, Daedeok-gu, Daejeon 34366, Republic of Korea

Abstract

New indium precursors based on alkyl and amine ligands make a difference in the properties of indium oxide thin films.

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00868E

Reference33 articles.

1. Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

2. Resonant photoemission at the O1s threshold to characterize In2O3 single crystals

3. Present status of amorphous In–Ga–Zn–O thin-film transistors

4. The Structure and Properties of Amorphous Indium Oxide

5. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

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