Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4822175
Reference37 articles.
1. Realization of In2O3 thin film transistors through reactive evaporation process
2. Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature
3. High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering
4. High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
5. Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability
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