Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4764866
Reference19 articles.
1. Unified closed-form model of thermionic-field and field emissions through a triangular potential barrier
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5. Simplified closed‐form trap‐assisted tunneling model applied to nitrided oxide dielectric capacitors
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