Unified closed-form model of thermionic-field and field emissions through a triangular potential barrier
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1557773
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1. Low-resistance ohmic contacts to p-type GaN
2. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
3. Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT
4. Emitter series resistance effect of multiple heterojunction contacts for Pnp heterojunction bipolar transistors
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