Ion‐assisted etching of silicon by SF6
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95746
Reference14 articles.
1. Plasma etching—A discussion of mechanisms
2. Mass and energy distribution of particles sputter etched from Si in a XeF2environment
3. Argon‐ion assisted etching of silicon by molecular chlorine
4. Etch products from the reaction of XeF2 with SiO2, Si3N4, SiC, and Si in the presence of ion bombardment
5. Ion‐assisted etching of silicon by molecular chlorine
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2. Numerical study of the plasma chemistry in inductively coupled SF6and SF6/Ar plasmas used for deep silicon etching applications;Journal of Physics D: Applied Physics;2011-10-13
3. Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment;Journal of Micromechanics and Microengineering;2009-02-02
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