Etch products from the reaction of XeF2 with SiO2, Si3N4, SiC, and Si in the presence of ion bombardment-Reference-Cited by-同舟云学术

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Etch products from the reaction of XeF2 with SiO2, Si3N4, SiC, and Si in the presence of ion bombardment

Published:1983 Issue:4 Volume:1 Page:927
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Winters Harold F.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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