The temperature dependence of the Cl2/GaAs(110) surface product distribution
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.470903
Reference33 articles.
1. Evidence for precursor‐mediated Cl2 etching of GaAs{110}: Effect of surface temperature and incident translational energy on the reaction probability
2. Supersonic molecular beam study of the trapping of Cl2 on GaAs{110} : dissociative chemisorption and desorption
3. Energetics of the sticking of Cl2onto Ga‐rich GaAs(100)c(8×2), As‐rich GaAs(100)c(2×8), and stoichiometric GaAs(110)(1×1) surfaces
4. Adsorption of chlorine on GaAs(110) investigated by high-resolution electron energy-loss spectroscopy
5. Br2andCl2adsorption and etching of GaAs(110) studied by use of scanning tunneling microscopy
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1. Photoelectrochemical Processes at n-GaAs(100)/Aqueous HCl Electrolyte Interface: A Synchrotron Photoemission Spectroscopy Study of Emersed Electrodes;The Journal of Physical Chemistry C;2014-06-10
2. Structuring of GaAs. I. Chemical dry etching: Temperature and chlorine pressure dependence of etch rates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
3. Sputtering and Etching of GaN Surfaces;The Journal of Physical Chemistry B;2001-09-26
4. XPS analysis of wet chemical etching of GaAs(110) by Br2–H2O: comparison of emersion and model experiments;Electrochimica Acta;2000-10
5. Synchrotron-Induced Photoemission of Emersed GaAs Electrodes after Electrochemical Etching in Br2/H2O Solutions;The Journal of Physical Chemistry B;2000-08-12
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