Sputtering and Etching of GaN Surfaces-Reference-Cited by-同舟云学术

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Sputtering and Etching of GaN Surfaces

Published:2001-09-26 Issue:41 Volume:105 Page:10029-10036
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Lai Ying-Huang,Yeh Chuin-Tih,Hwang Jung-Min,Hwang Huey-Liang,Chen Chien-Te,Hung Wei-Hsiu

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp011728k

Reference33 articles.

1. Argon incorporation and surface compositional changes in InP(100) due to low‐energy Ar+ion bombardment

2. High ion density dry etching of compound semiconductors

3. Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization

4. Plasma etch-induced conduction changes in gallium nitride

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