Impact of Ga and N Vacancies at the GaN m -Plane on the Carrier Dynamics of Micro-Light-Emitting Diodes
Author:
Funder
KISTI National Supercomputing Center
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.19.014018/fulltext
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination;Nature Communications;2023-11-21
2. Impact of Ga and N Vacancies at the GaN m -Plane on the Carrier Dynamics of Micro-Light-Emitting Diodes;Physical Review Applied;2023-01-06
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