Energetics of the sticking of Cl2onto Ga‐rich GaAs(100)c(8×2), As‐rich GaAs(100)c(2×8), and stoichiometric GaAs(110)(1×1) surfaces

Author:

Flaum Harris C.,Sullivan Daniel J. D.,Kummel Andrew C.

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-09

2. Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl2∕Ar+;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-01

3. A supersonic molecular beam study of the reaction of tetrakis(dimethylamido)titanium with self-assembled alkyltrichlorosilane monolayers;The Journal of Chemical Physics;2006-07-21

4. Development of chemically assisted etching method for GaAs-based optoelectronic devices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-03

5. Total ionization cross sections of Cl and Cl2 by electron impact;Surface and Interface Analysis;2005

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