Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments-Reference-Cited by-同舟云学术

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

Published:2020-08-24 Issue:8 Volume:117 Page:082103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Foster Geoffrey M.¹^ORCID,Koehler Andrew²,Ebrish Mona³,Gallagher James²,Anderson Travis²,Noesges Brenton⁴,Brillson Leonard⁴⁵^ORCID,Gunning Brendan⁶^ORCID,Hobart Karl D.²^ORCID,Kub Francis²

Affiliation:

1. American Society for Engineering Education Postdoctoral Fellow Residing at U.S. Naval Research Laboratory, Washington, DC 20036, USA

2. U.S. Naval Research Laboratory, Washington, DC 200375, USA

3. National Research Council Postdoctoral Fellow Residing at the U.S. Naval Research Laboratory, Washington, DC 20036, USA

4. Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA

5. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

6. Sandia National Labs, Albuquerque, New Mexico 87185, USA

Funder

Office of Naval Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0021153

Reference24 articles.

1. Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

2. 1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

3. Comparing electrical performance of GaN trench-gate MOSFETs witha-plane $(11\bar{2}0)$ andm-plane $(1\bar{1}00)$ sidewall channels

4. Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p-type GaN

5. Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness

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