Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

Author:

Tadjer Marko J.,Feigelson Boris N.,Greenlee Jordan D.,Freitas Jaime A.,Anderson Travis J.,Hite Jennifer K.,Ruppalt Laura,Eddy Charles R.,Hobart Karl D.,Kub Fritz J.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Morkoc H. , Handbook of Nitride Semiconductors and Devices, Wiley, New York, 2008, pp. 167–190.

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Pearton S. J. , “Ion Implantation in Group III Nitrides,” in Comprehensive Semiconductor Science and Technology, Elsevier, Amsterdam, 201125–43.

4. Zolper J. C. Pearton S. J. Wilson R. G. Stall R. A. . “Implant Activation and Redistribution of Dopants in GaN” Proc. of the 11th International Conference on Ion Implantation Technology, 705 (1996).

5. Ion implantation doping and isolation of GaN

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