Analytical Model of Center Potential in GaN Vertical Junctionless Power Fin-MOSFETs for Fast Device-Design Optimization
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Uttarakhand, India
Funder
Science and Engineering Research Board
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/4358746/10190172.pdf?arnumber=10190172
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3. An Interpretable Symbolic Regression Model for Prediction of GaN Vertical Power MOSFET Failsafe Boundaries;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
4. Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process;Applied Physics Express;2023-12-01
5. Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process;IEEE Transactions on Electron Devices;2023
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