Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p-type GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1894580
Reference21 articles.
1. GaN: Processing, defects, and devices
2. Nitride Semiconductors and Devices
3. Atomic geometry and electronic structure of native defects in GaN
4. Atomic model for blue luminescences in Mg-doped GaN
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