Comparing electrical performance of GaN trench-gate MOSFETs witha-plane $(11\bar{2}0)$ andm-plane $(1\bar{1}00)$ sidewall channels-Reference-Cited by-同舟云学术

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Comparing electrical performance of GaN trench-gate MOSFETs witha-plane $(11\bar{2}0)$ andm-plane $(1\bar{1}00)$ sidewall channels

Published:2016-11-02 Issue:12 Volume:9 Page:121001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Gupta Chirag,Chan Silvia H.,Lund Cory,Agarwal Anchal,Koksaldi Onur S.,Liu Junquian,Enatsu Yuuki,Keller Stacia,Mishra Umesh K.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=12/a=121001/pdf

Reference15 articles.

1. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

2. Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

3. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

4. Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

5. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

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1. Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs;Electronics;2024-06-15

2. Route Toward Commercially Manufacturable Vertical GaN Devices;IEEE Transactions on Electron Devices;2024

3. Comparing Electrical Performance of Lateral GaN Schottky Barrier Diode with A-Plane ($11\bar2 0$) and M-Plane ($1\bar1 00$) Nonpolar Sidewall Contact;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. Fabrication of Quasi-Vertical GaN-On-SiC Trench MOSFETs;Key Engineering Materials;2023-05-19

5. Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET;ACS Applied Materials & Interfaces;2023-05-16

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