Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET-Reference-Cited by-同舟云学术

Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET

Published:2023-05-16 Issue:21 Volume:15 Page:26159-26165
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhou Jiaan¹²^ORCID,Tang Wenxin³²,Ju Tao²,Wang Heng²⁴,Yu Guohao²,Zhou Xin¹²,Zhang Li²,Xu Kun²,Zhang Xuan²,Zeng Zhongming²^ORCID,Zhang Xinping¹,Zhang Baoshun³

Affiliation:

1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

2. Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy Sciences, Suzhou, Jiangsu 215123, China

3. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, People’s Republic of China

4. School of Microelectronics, Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Suzhou Science and Technology Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c02840

Reference31 articles.

1. GaN Technology for Power Electronic Applications: A Review

2. Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices

3. Vertical Power p-n Diodes Based on Bulk GaN

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