Transport properties of intrinsic hydrogenated amorphous silicon produced by the hot-wire technique investigated by the photomixing technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365601
Reference25 articles.
1. Deposition of device quality, lowHcontent amorphous silicon
2. On the role of hydrogen in metastable defect equilibration in undoped hydrogenated amorphous silicon
3. Electronic transport and state distribution in amorphous Si films
4. Determination of the optical bandgap of amorphous silicon
5. Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Light-induced degradation in a-Si:H and its relation to defect creation;Solar Energy Materials and Solar Cells;2003-07
2. Potential fluctuations, diffusion length and lateral photovoltage in hydrogenated amorphous silicon and silicon–germanium thin films;Philosophical Magazine B;2002-07
3. Less-understood phenomena in the light-induced degradation and photocarrier capture in a-Si:H;Journal of Non-Crystalline Solids;2002-04
4. Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma;Journal of Applied Physics;2001-02-15
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