Potential fluctuations, diffusion length and lateral photovoltage in hydrogenated amorphous silicon and silicon–germanium thin films
Author:
Affiliation:
1. a Department of Physics , Indian Institute of Technology , Kanpur , 208 016 , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642810208223161
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1. Potential Fluctuations and Staebler-Wronski Effect
2. Electronic transport and metastabilities in P-doped a-Si:H
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4. Comparison of thermal and light induced metastabilities in lithium doped a-Si:H
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