Less-understood phenomena in the light-induced degradation and photocarrier capture in a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivity
2. Light Induced Defects in a-Si:H, Temperature Dependence of their Creation and Anneal and their effect on Photocarrier Lifetime
3. IEEE 28th Photovoltaic Specialists Conference Proceedings;Stradins,2000
4. Photocarrier capture properties of light-induced defects in a-Si:H
5. Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge;Applied Physics Letters;2003-11-03
2. Mechanisms of metastability in hydrogenated amorphous silicon;Solar Energy Materials and Solar Cells;2003-07
3. Light-induced degradation in a-Si:H and its relation to defect creation;Solar Energy Materials and Solar Cells;2003-07
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