Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1624637
Reference11 articles.
1. Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H
2. Light Induced Defect Creation Kinetics in Thin Film Protocrystalline Silicon Materials and Their Solar Cells
3. Less-understood phenomena in the light-induced degradation and photocarrier capture in a-Si:H
4. Shortfall of defect models for amorphous silicon solar cell performance
5. Kinetics of Light Induced Changes in Protocrystalline Thin Film Materials and Solar Cells
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1. The native and metastable defects and their joint density of states in hydrogenated amorphous silicon obtained from the improved dual beam photoconductivity method;Journal of Applied Physics;2023-03-24
2. Performance and stability improvement of single junction a-Si:H solar cell by interface engineering;Journal of Materials Science: Materials in Electronics;2019-06-01
3. Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection;AIP Conference Proceedings;2018
4. Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation;Journal of Applied Physics;2014-09-07
5. Fast light-induced metastability and thermal recovery for protocrystalline silicon multilayers proved by sub-bandgap absorption spectra;Solar Energy;2014-08
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