Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H

Abstract

▪ Abstract  Hydrogenated amorphous silicon (a-Si:H) exhibits a metastable light-induced degradation of its optoelectronic properties that is called the Staebler-Wronski effect, after its discoverers. This degradation effect is associated with the relatively high diffusion coefficient of hydrogen and the changes in local bonding coordination promoted by hydrogen. Reviewed are the fundamental aspects of the interplay between hydrogen and electronic energy states that form the basis of competing microscopic models for explaining the degradation effect. These models are tested against the latest experimental observations, and material and preparation parameters that reduce the Staebler-Wronski effect are discussed.