Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109856
Reference11 articles.
1. Electronic transport and state distribution in amorphous Si films
2. Determination of the optical bandgap of amorphous silicon
3. Quantitative analysis of hydrogen in glow discharge amorphous silicon
4. Experimental Determination of the Dark Fermi Level in Hydrogenated Amorphous Silicon.
5. Temperature dependence of the optical absorption edge in a-Si:H
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1. The Statistical Shift Model for the Meyer-Neldel Rule;Defect and Diffusion Forum;2001-08
2. Transport properties of intrinsic hydrogenated amorphous silicon produced by the hot-wire technique investigated by the photomixing technique;Journal of Applied Physics;1997-07-15
3. Defects in intrinsic and pseudodoped amorphous hydrated silicon;Semiconductors;1997-03
4. Influence of the light‐induced degradation on the extended state mobility in hydrogenated amorphous silicon;Applied Physics Letters;1996-12-23
5. The Staebler–Wronski effect and the thermal equilibration of defect and free carrier concentrations;Journal of Applied Physics;1996-03-15
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