Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes-Reference-Cited by-同舟云学术

Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes

Published:2007-08-20 Issue:8 Volume:91 Page:081112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Z. Y.,Luxmoore I. J.,Jin C. Y.,Liu H. Y.,Jiang Q.,Groom K. M.,Childs D. T.,Hopkinson M.,Cullis A. G.,Hogg R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2772845

Reference16 articles.

1. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

2. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser

3. Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

4. Electronic structure of self-assembled InAs quantum dots in GaAs matrix

5. Wavelength switching transition in quantum dot lasers

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 100 μm-Cavity GaN-Based Edge Emitting Laser Diodes by the Automatic Cleavage Technique Using GaN-on-Si Epitaxial Lateral Overgrowth;Crystal Growth & Design;2023-04-14

2. Power improvement in ridge bent waveguide superluminescent light-emitting diodes based on GaN quantum dots;Physica Scripta;2021-11-08

3. Waveguide-induced coalescence of exceptional points;Physical Review A;2020-05-08

4. Emission spectrum of broadband quantum dot superluminescent diodes;Optics Communications;2020-03

5. Near-infrared and mid-infrared semiconductor broadband light emitters;Light: Science & Applications;2017-12-07