Power improvement in ridge bent waveguide superluminescent light-emitting diodes based on GaN quantum dots
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
https://iopscience.iop.org/article/10.1088/1402-4896/ac33fc/pdf
Reference71 articles.
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2. Optical design of InGaN/GaN nanoLED arrays on a chip: toward: highly resolved illumination;Kluczyk-Korch;Nanotechnology,2021
3. Individually switchable InGaN/GaN Nano-LED arrays as highly resolved illumination engines;Kluczyk-Korch;Electronics,2021
4. Nano-LED induced chemical reactions for structuring processes;Mikulics;Nanoscale Adv,2020
5. Monolithic semi-polar (1 ̄101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate,;Wang;Chin. Phys. B,2019
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