100 μm-Cavity GaN-Based Edge Emitting Laser Diodes by the Automatic Cleavage Technique Using GaN-on-Si Epitaxial Lateral Overgrowth
Author:
Affiliation:
1. Corporate R&D Group, Research Institute for Advanced Materials and Devices, Kyocera Corporation, 3-5-3 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00070
Reference28 articles.
1. Edge-emitting blue laser diode with high CW wall-plug efficiency of 50 %
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