Straining of monocrystalline silicon thin films with the use of porous silicon as stress generating nanomaterial
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2179620
Reference21 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
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3. Strained Si on insulator technology: from materials to devices
4. A. Halimaoui, in Properties of Porous Silicon, edited by L. T. Canham (INSPEC, The IEE, London, 1997), p. 12.
5. Stress in oxidized porous silicon layers
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