Study of band‐gap narrowing effect and nonradiative recombination centers for heavily C‐doped GaAs by photoluminescence spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359406
Reference11 articles.
1. Carbon incorporation in GaAs and AlxGa1−xAs layers grown by molecular‐beam epitaxy
2. Carbon doping for AlGaAs/GaAs heterojunction bipolar transistors by molecular‐beam epitaxy
3. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
4. Passivation of carbon‐doped GaAs layers by hydrogen introduced by annealing and growth ambients
5. p‐type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
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3. Carbon-doped InP∕In[sub 0.53]Ga[sub 0.47]As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
4. Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs;Journal of Crystal Growth;2001-06
5. Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C;Physical Review B;2000-08
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