Characteristics of annealedp/njunctions between GaAs and Si (100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98322
Reference15 articles.
1. Biatomic Steps on (001) Silicon Surfaces
2. Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal Si
3. Single Crystal Growth of Superconducting Oxides with the Layered Perovskite Structure
4. Symmetric arsenic dimers on the Si(100) surface
5. Optical properties of GaAs on (100) Si using molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The formation of GaAs/Si photodiodes by pulsed-laser deposition;SPIE Proceedings;2004-07-15
2. Heterojunction diodes nGaAs/pSi with ideal characteristics;Applied Surface Science;1996-08
3. GaAs on Si: Potential Applications;Heterostructures on Silicon: One Step Further with Silicon;1989
4. GaAs‐Si heterojunction bipolar transistor;Applied Physics Letters;1988-03-07
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