Biatomic Steps on (001) Silicon Surfaces
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.57.3054/fulltext
Reference23 articles.
1. Surface Infrared Study of Si(100)-(2×1)H
2. Structural and Electronic Properties of Stepped Semiconductor Surfaces
3. LEED study of the stepped surface of vicinal Si (100)
4. Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing
5. Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
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