GaAs‐Si heterojunction bipolar transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99295
Reference13 articles.
1. Gigabit logic bipolar technology: advanced super self-aligned process technology
2. High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors
3. Reduction of extrinsic base resistance in GaAs/AlGaAs heterojunction bipolar transistors and correlation with high-frequency performance
4. AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
5. Heterostructure bipolar transistors and integrated circuits
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1. Heterostructure Bipolar Transistors;Physics of High-Speed Transistors;1993
2. Gallium arsenide and other compound semiconductors on silicon;Journal of Applied Physics;1990-10
3. AlGaAs/GaAs heterojunction bipolar transistors fabricated with various collector-carrier-concentrations;Electronics Letters;1990
4. Selected area heteroepitaxial growth of GaAs on silicon for advanced device structures;Thin Solid Films;1989-12
5. High-speed performance of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors;IEEE Electron Device Letters;1989-01
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