Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors-Reference-Cited by-同舟云学术

Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors

Published:2019-02 Issue:2 Volume:7 Page:022501
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Kim Junghwan¹^ORCID,Bang Joonho¹,Nakamura Nobuhiro¹²,Hosono Hideo¹³

Affiliation:

1. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

2. New Product R&D Center, Asahi Glass Co. Ltd., 1150, Hazawa, Kanagawa-ku, Yokohama 221-8755, Japan

3. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5053762

Reference19 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor

3. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors

4. Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

5. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

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