Theoretical model of interface trap density using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements-Reference-Cited by-同舟云学术

Theoretical model of interface trap density using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements

Published:2006-02-20 Issue:8 Volume:88 Page:083510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wong K. M.,Chim W. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2177352

Reference11 articles.

1. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

2. Characteristic electronic defects at the Si‐SiO2interface

3. A reliable approach to charge-pumping measurements in MOS transistors

4. Rapid interface parameterization using a single MOS conductance curve

5. TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY

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