Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps-Reference-Cited by-同舟云学术

Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps

Published:2017-09-14 Issue:10 Volume:122 Page:105701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chinone N.¹,Cho Y.¹^ORCID

Affiliation:

1. Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai 980-8577, Japan

Funder

The Japan Society for Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4991739

Reference37 articles.

1. S. M. Sze and K. K. Ng , Physics of Semiconductor Devices, 3rd ed. ( John Wiley & Sons, Inc. Hoboken, New Jersey, 2007), p. 137.

2. D. K. Schoroder , Semiconductor Material and Device Characterization, 3rd ed. ( John Wiley & Sons, Inc. Hoboken, New Jersey, 2006), p. 359.

3. S. M. Sze and K. K. Ng , Physics of Semiconductor Devices, 3rd ed. ( John Wiley & Sons, Inc. Hoboken, New Jersey, 2007), p. 150.

4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

5. Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes

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