Characterization, modeling and physical mechanisms of different surface treatment methods at room temperature on the oxide and interfacial quality of the SiO2 film using the spectroscopic scanning capacitance microscopy-Reference-Cited by-同舟云学术

Characterization, modeling and physical mechanisms of different surface treatment methods at room temperature on the oxide and interfacial quality of the SiO2 film using the spectroscopic scanning capacitance microscopy

Published:2017 Issue: Volume:7 Page:1308-1318
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Wong Kin Mun

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference56 articles.

1. Si‐SiO2interface structures on Si(100), (111), and (110) surfaces

2. Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices

3. Quantization effects on the inversion mode of a double gate MOS

4. What can electron paramagnetic resonance tell us about the Si/SiO[sub 2] system?

5. MOSFET models for vlsi circuit simulation: theory and practice;Arora,1993

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