Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices-Reference-Cited by-同舟云学术

Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices

Published:2016 Issue: Volume:6 Page:233-234
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Mim Nugaira Gahan,Kutub Sayeem Bin,Haque Anisul

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference5 articles.

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2. High mobility III-V MOSFET technology;Passlack,2006

3. 85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications;Datta,2005

4. Field-effect mobility of InAs surface channel nMOSFET with low Dit scaled gate-stack;Wang;IEEE Trans Electron Dev,2015

5. Record maximum transconductance of 3.45mS/μm for III-V FETs;Lin;IEEE Electron Dev Lett,2016

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