Author:
Saravana Kumar R.,Mohanbabu A.,Mohankumar N.,Godwin Raj D.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Zafar, S.: Designing of double gate HEMT in TCAD for THz applications. In: Proceedings of 2013 10th International Bhurban Conference on Applied Sciences and Technology (IBCAST), pp. 402–405. (2013)
2. Kim, D.H.: Performance evaluation of 50 nm $$\text{In}_{0.7}\text{ Ga }_{0.3}\text{ As }$$ In 0.7 Ga 0.3 As HEMTs for beyond-CMOS logic applications. IEEE International Electron Devices meeting, IEDM Technical Digest, pp. 767–770. (2005)
3. Ajayan, A.: 20-nm T-gate composite channel enhancement—mode metamorphic HEMT on GaAs substrates for future THz applications. J. Comput. Electron. 15(4), 1291–1296 (2016)
4. Kim, D.H.: Lateral and vertical scaling of $$\text{ In }_{0.7}\text{ Ga }_{0.3}\text{ As }$$ In 0.7 Ga 0.3 As HEMTs for post-Si-CMOS logic applications. IEEE Trans. Electron Devices 55(10), 2546–2553 (2008)
5. Gomes, U.P.: Impact of aspect ratio on the logic performance of strained $$\text{ In }_{0.53}\text{ Ga }_{0.47}\text{ As }$$ In 0.53 Ga 0.47 As metamorphic HEMT. J. Electron Devices 13, 939–944 (2012)
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