Author:
Sujatha G.,Mohankumar N.,Poornachandran R.,Saravanakumar R.,Pandian M. Karthigai
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Kumar SP, Agrawal A, Chaujar R, Gupta RS, Gupta M (2010) Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. Microelectron Reliab 51:587–596
2. Kim D-H, del Alamo JA, Lee J-H, Seo K-S (2005) Performance Evaluation of 50 nm In0.7Ga0.3As HEMTs For Beyond-CMOS Logic Applications. IEEE International Electron Devices meeting, IEDM Technical Digest, Washington DC
3. Kuo C-I, Hsu H-T, Chang EY, Chang C-Y, Miyamoto Y, Datta S, Radosavljevic M, Huang G-W, Lee C-T RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel HEMT Using Gate-Sinking Technology. IEEE Electron Device Lett, Vol. 29, no. 4, 290-293 2008
4. Kumar RS, Mohanbabu A, Mohankumar N, Raj DG (2017) In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications. J Comput Electron. https://doi.org/10.1007/s10825-017-0991-x
5. Kim D-H, del Alamo JA (2008) 30 nm E-mode InAs PHEMTs for THz and Future Logic Applications” IEEE International Electron Devices Meeting, 2008. IEDM
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