RF and Logic Performance Improvement of $ \hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Composite-Channel HEMT Using Gate-Sinking Technology-Reference-Cited by-同舟云学术

RF and Logic Performance Improvement of $ \hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Composite-Channel HEMT Using Gate-Sinking Technology

Published:2008-04 Issue:4 Volume:29 Page:290-293
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chien-I Kuo ,Heng-Tung Hsu ,Chang E.Y.,Chia-Yuan Chang ,Miyamoto Y.,Datta S.,Radosavljevic M.,Guo-Wei Huang ,Ching-Ting Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4475262/04458233.pdf?arnumber=4458233

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2. Influence of Barrier with Gate Sinking on the Performance of InAs Composite Channel DMDG-HEMT Devices for High-Frequency Applications;Silicon;2022-03-09

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4. RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect;Transactions on Electrical and Electronic Materials;2020-11-17

5. Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT;Journal of Computational Electronics;2019-06-27