Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference53 articles.
1. Mateos, J., Rodilla, H., Vasallo, B.G., González, T.: Monte Carlo modelling of noise in advanced III–V HEMTs. J. Comput. Electron. 14, 72–86 (2015)
2. Palermo, C., Marinchio, H., Shiktorov, P., Starikov, E., Gružinskis, V., Mahi, A., Varani, L.: TeraHertz electronic noise in field-effect transistors. J. Comput. Electron. 14, 87–93 (2015)
3. Chiu, H.-C., Lin, W.-Y., Chou, C.-Y., Yang, S.-H., Mai, K.-D., Chiu, P., Hsueh, W.J., Chyi, J.-I.: Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal. Microelectron. Eng. 138, 17–20 (2015)
4. Tsai, R., et al.: Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics. In: 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, San Diego, CA, USA, pp. 294–297 (2003)
5. Rathi, S., Jogi, J., Gupta, M., Gupta, R.S.: Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs–InGaAs symmetric double-gate HEMT. Microelectron. Reliab. 49, 1508–1514 (2009)
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