TeraHertz electronic noise in field-effect transistors-Reference-Cited by-同舟云学术

TeraHertz electronic noise in field-effect transistors

Published:2014-12-24 Issue:1 Volume:14 Page:87-93
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Palermo C.,Marinchio H.,Shiktorov P.,Starikov E,Gružinskis V.,Mahi A.,Varani L

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-014-0657-x.pdf

Reference10 articles.

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2. Shiktorov, P., Starikov, E., Gružzinskis, V., Varani, L., Sabatini, G., Marinchio, H., Reggiani, L.: Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels. J. Stat. Mech Theory Exp. 2009(01), 01047 (2009)

3. Dyakonov, M., Shur, M.: Plasma wave electronics: novel terahertz devices using two dimensional electron fluid. IEEE Trans. Electron. Devices 43, 1640–1645 (1996)

4. Millithaler, J.-F., Reggiani, L., Pousset, J., Varani, L., Palermo, C., Knap, W., Matéos, J., González, T., Pérez, S., Pardo, D.: Monte Carlo investigation of terahertz plasma oscillations in ultrathin layers of n-type $$\text{ In }_{0.53}\text{ Ga }_{0.47}$$ In 0.53 Ga 0.47 As. Appl. Phys. Lett. 92, 042113 (2008)

5. Nouvel, P., Torres, J., Blin, S., Marinchio, H., Laurent, T., Palermo, C., Varani, L., Shiktorov, P., Starikov, E., Gružinskis, V., Teppe, F., Roelens, Y., Shchepetov, A., Bollaert, S.: TeraHertz emission induced by optical beating in nanometer-length field-effect transistors. J. Appl. Phys. 111, 103707 (2012)

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