Evidence of the origin of infrared scattering in GaAs with high‐resolution infrared tomography
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339251
Reference8 articles.
1. Direct Observation of Dislocations in a LEC-GaP Crystal by Light Scattering Method
2. Optical properties and origin of infrared light scattering centers in undoped semi-insulating GaAs crystals
3. Insular crystals in undoped GaAs single crystals: A probable source of dislocation
4. Etching of Dislocations on the Low‐Index Faces of GaAs
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1. IDENTIFY OF THE MICRO-DEFECTS IN SEMI-INSULATING GaAs;International Journal of Modern Physics B;2002-11-20
2. Liquid encapsulated, vertical Bridgman growth of GaAs crystal with uniform EL2 concentration;Journal of Crystal Growth;1995-10
3. TEM characterization of defects in LEC-grown GaAs substrates;Journal of Crystal Growth;1991-04
4. X-ray characterization of defect structure in LEC GaAs crystals;Journal of Crystal Growth;1991-02
5. Defect Analysis on GaAs Crystals by Precision Measurements of Density and Lattice Parameter;physica status solidi (a);1990-11-16
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