X-ray characterization of defect structure in LEC GaAs crystals-Reference-Cited by-同舟云学术

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X-ray characterization of defect structure in LEC GaAs crystals

Published:1991-02 Issue:3-4 Volume:108 Page:744-750
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kowalski G.,Zielinska-Rohozinska E.,Czekalski T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Growth cells of heavily In-doped LEC GaAs crystals

2. Semi-Insulating III-V Materials;Fillard,1988

3. Semi-Insulating III-V Materials;Weyher,1988

4. Proc. 14th Intern. Symp. on GaAs and Related Compounds;Weyher,1988

5. Defect Recognition and Image Processing in III-V Compounds (DRIP);Weyher,1985

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of high-energy light-ion irradiation on SI-GaAs and GaAs:Cr as observed by Raman spectroscopy;Journal of Raman Spectroscopy;2011-08-12

2. Synchrotron topographic study of defects in liquid-encapsulated Czochralski-grown semi-insulating gallium arsenide wafers;Journal of Crystal Growth;1993-09

3. X-ray Characterization of Defect Structure in LEC Annealed GaAs Crystals;Crystal Research and Technology;1992

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