Insular crystals in undoped GaAs single crystals: A probable source of dislocation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95032
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5. A new etchant system, K2Cr2O7-H2SO4-HCl, for GaAs and InP
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1. Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs;Materials Science and Engineering: B;1998-08
2. Liquid encapsulated, vertical Bridgman growth of GaAs crystal with uniform EL2 concentration;Journal of Crystal Growth;1995-10
3. A study of dislocations, precipitates, and deep level EL2 in LEC GaAs grown under Ga-rich conditions;Physica Status Solidi (a);1993-08-16
4. Non-intrusive mapping of subsurface defects in semiconductors;Applied Physics A Solids and Surfaces;1992-08
5. X-ray diffuse scattering identification of matrix As-rich microdefects in GaAs crystals;Journal of Crystal Growth;1992-02
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